Gallium-arsenic-antimony heterojunction photocells

A study of heterojunction solar cells with a narrow-gap GaAs(1-x)Sb(x) layer and a wide-gap GaAs window is reported. Photocurrent spectra of these heterojunction structures is presented. The attainment of reverse breakdown voltages of 25-30 V in the diodes shows that it is possible to produce structures in which the lattice mismatch of the substrate and the narrow-gap layer will have a minimal effect on the properties of the p-n junction.