Gallium-arsenic-antimony heterojunction photocells
Abstract
A study of heterojunction solar cells with a narrow-gap GaAs(1-x)Sb(x) layer and a wide-gap GaAs window is reported. Photocurrent spectra of these heterojunction structures is presented. The attainment of reverse breakdown voltages of 25-30 V in the diodes shows that it is possible to produce structures in which the lattice mismatch of the substrate and the narrow-gap layer will have a minimal effect on the properties of the p-n junction.
- Publication:
-
Pisma v Zhurnal Tekhnischeskoi Fiziki
- Pub Date:
- February 1981
- Bibcode:
- 1981PZhTF...7..132A
- Keywords:
-
- Antimony;
- Energy Gaps (Solid State);
- Gallium Arsenides;
- Heterojunction Devices;
- Photovoltaic Cells;
- Solar Cells;
- Energy Conversion Efficiency;
- Open Circuit Voltage;
- P-N Junctions;
- Energy Production and Conversion