Harnessing moiré ferroelectricity to modulate semiconductor monolayer light emission
Abstract
Ferroelectricity has been recently discovered in stacked or twisted van der Waals (vdW) moiré systems. The versatility of producing a large array of size-tunable domains and integration with diverse functional materials make them an enticing platform for developing multifunctional devices. Here, we show that ferroelectric polar domains formed in a twisted hexagonal boron nitride (t-hBN) substrate can modulate light emission from an adjacent semiconductor monolayer. The abrupt change in electrostatic potential across the domains produces an in-plane electric field (E-field) and leads to a remarkably large exciton Stark shift in the adjacent MoSe$_2$ monolayer, previously only observable in \textit{p-n} junctions created by the advanced e-beam lithography tools. Both the spectrum and spatial pattern of the light emission from the monolayer are periodically modulated by the remote moiré potential imposed by the t-hBN substrate. We further observe a characteristic hysteresis behavior in the light emission as an electric gate erases and restores the domains. Our findings chart an exciting pathway for integrating nanometer-scale moiré ferroelectric domains with various optically active functional layers, paving the way for advanced nanophotonic applications.
- Publication:
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arXiv e-prints
- Pub Date:
- May 2024
- DOI:
- 10.48550/arXiv.2405.11159
- arXiv:
- arXiv:2405.11159
- Bibcode:
- 2024arXiv240511159K
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Materials Science