Molybdenum low-resistance thin-film resistors for cryogenic devices
Abstract
We present a study of thin-film Mo resistors for NbN electronics operating at cryogenic temperatures. The key step is the 0.5–1.5 keV ion cleaning–activation of NbN before Mo deposition, which allows us to obtain a high-quality Mo/NbN interface. This, together with an additional Al bandage layer in the area of the contact pads, allows us to reduce the contact resistance below 1 Ω. The quality of the interfaces is confirmed by transmission electron microscopy and x-ray reflectometry.
- Publication:
-
Superconductor Science Technology
- Pub Date:
- October 2024
- DOI:
- 10.1088/1361-6668/ad6adb
- arXiv:
- arXiv:2406.11329
- Bibcode:
- 2024SuScT..37j5009K
- Keywords:
-
- thin-film resistors;
- superconducting films;
- contact resistance;
- Condensed Matter - Superconductivity