Experimental Evidence for Defect Tolerance in Pb-Halide Perovskites
Abstract
The term defect tolerance (DT) is used often to rationalize the exceptional optoelectronic properties of Halide Perovskites (HaPs) and their devices. Even though DT lacked direct experimental evidence, it became a "fact" in the field. DT in semiconductors implies that structural defects do not translate to electrical and optical effects (e.g., due to charge trapping), associated with such defects. We present the first direct experimental evidence for DT in Pb-HaPs by comparing the structural quality of 2-dimensional (2D), 2D-3D, and 3D Pb-iodide HaP crystals with their optoelectronic characteristics using high-sensitivity methods. Importantly, we get information from the materials' bulk, because we sample at least a few hundred nanometers, up to several micrometers, from the sample's surface, which allows for assessing intrinsic bulk (and not only surface-) properties of HaPs. The results point to DT in 3D, 2D-3D, and 2D Pb-HaPs. Overall, our data provide an experimental basis to rationalize DT in Pb-HaPs. These experiments and findings can guide the search for, and design of other materials with DT.
- Publication:
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arXiv e-prints
- Pub Date:
- May 2023
- DOI:
- 10.48550/arXiv.2305.16017
- arXiv:
- arXiv:2305.16017
- Bibcode:
- 2023arXiv230516017P
- Keywords:
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- Condensed Matter - Materials Science;
- Physics - Applied Physics
- E-Print:
- Due to a problem that was discovered with the original SPS data for the C4N1 samples , the experiments were repeated and the manuscript is now revised in light of the new data. The new version will be put on arXiv the moment it is ready