Structural properties of epitaxial α -U thin films on Ti, Zr, W and Nb
Abstract
Thin layers of orthorhombic uranium (α -U) have been grown onto buffered sapphire substrates by dc magnetron sputtering, resulting in the discovery of new epitaxial matches to Ti(00.1) and Zr(00.1) surfaces. These systems have been characterized by x-ray diffraction and reflectivity and the optimal deposition temperatures have been determined. More advanced structural characterization of the known Nb(110) and W(110) buffered α -U systems has also been carried out, showing that past reports of the domain structures of the U layers are incomplete. The ability of this low symmetry structure to form crystalline matches across a range of crystallographic templates highlights the complexity of U metal epitaxy and points naturally toward studies of the low temperature electronic properties of α -U as a function of epitaxial strain.
- Publication:
-
Physical Review Materials
- Pub Date:
- December 2023
- DOI:
- 10.1103/PhysRevMaterials.7.123602
- arXiv:
- arXiv:2308.03576
- Bibcode:
- 2023PhRvM...7l3602N
- Keywords:
-
- Condensed Matter - Materials Science