Measurement of the quantum-confined Stark effect in InAs/In(Ga)As quantum dots with p-doped quantum dot barriers
Abstract
The quantum-confined Stark effect in InAs/In(Ga)As quantum dots (QDs) using non-intentionally doped and p-doped QD barriers was investigated to compare their performance for use in optical modulators. The measurements indicate that the doped QD barriers lead to a better figure of merit (FoM), defined as the ratio of the change in absorption Δα for a reverse bias voltage swing to the loss at 1 V α(1 V), FoM=Δα/α (1 V). The improved performance is due to the absence of the ground-state absorption peak and an additional component to the Stark shift. Measurements indicate that p-doping the QD barriers can lead to more than a 3x increase in FoM modulator performance between temperatures of −73 °C to 100 °C when compared with the stack with NID QD barriers.
- Publication:
-
Optics Express
- Pub Date:
- May 2022
- DOI:
- 10.1364/OE.455491
- arXiv:
- arXiv:2205.09427
- Bibcode:
- 2022OExpr..3017730M
- Keywords:
-
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Materials Science;
- Condensed Matter - Other Condensed Matter;
- Physics - Applied Physics;
- Physics - Optics
- E-Print:
- https://doi.org/10.1364/OE.455491