Current controlled non-hysteresis magnetic switching in the ansence of magnetic field
Abstract
By means of local ion implantation, we investigated the influence of lateral interface on current-induced magnetic switching by spin-orbit torque in a perpendicularly magnetized Pt/Co/Ta multilayer. The experimental results show that, in this system, the domain wall motion under electrical current can be affected by two mechanisms: symmetry breaking and current-driven Néel wall motion at the lateral interface. The dominant mechanism is symmetry breaking (current-driven Néel wall motion) at the large (small) current. Due to the competitive relationship of these two mechanisms, the non-hysteresis effect magnetic switching without an external magnetic field is obtained. Based on the non-hysteresis effect magnetic switching, we can realize AND and OR logic gates without resetting.
- Publication:
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arXiv e-prints
- Pub Date:
- November 2021
- DOI:
- 10.48550/arXiv.2111.07296
- arXiv:
- arXiv:2111.07296
- Bibcode:
- 2021arXiv211107296L
- Keywords:
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- Physics - Applied Physics
- E-Print:
- doi:10.1063/5.0078514