Numerical Analysis of Gate-All-Around HfO2/TiO2/HfO2 High-K Dielectric Based WSe2 NCFET With Reduced Sub-Threshold Swing and High On/Off Ratio Hosen, Kamal ; Islam, Md. Sherajul ; Stampfl, Catherine ; Park, Jeongwon Abstract Publication: IEEE Access Pub Date: 2021 DOI: 10.1109/ACCESS.2021.3105341 Bibcode: 2021IEEEA...9k6254H