Solution-processed silver sulphide nanocrystal film for resistive switching memories
Abstract
Resistive switching memories allow electrical control of the conductivity of a material, by inducing a high resistance (OFF) or a low resistance (ON) state, using electrochemical and ion transport processes. As alternative to high temperature and vacuum-based physical sulphurization methods of silver (Ag), here we propose, as resistive switching medium, a layer built from colloidal Ag$_{2-x}$S nanocrystals -compatible with solution-processed approaches. The effect of the electrode size (from macro- to micro-scale), composition (Ag, Ti and Pt) and geometry on the device performance together with the electrochemical mechanisms involved are evaluated. We achieved an optimized Ag/Ti bowtie proof-of-concept configuration by e-beam lithography, which fulfils the general requirements for ReRAM devices in terms of low power consumption and reliable $I_{ON}/I_{OFF}$ ratio. This configuration demonstrates reproducible switching between ON and OFF states with data endurance of at least 20 cycles; and an $I_{ON}/I_{OFF}$ ratio up to 10$^3$ at low power consumption (0.1V readout), which outperforms previous results in literature for devices with resistive layers fabricated from silver chalcogenide nanoparticles.
- Publication:
-
arXiv e-prints
- Pub Date:
- April 2020
- DOI:
- 10.48550/arXiv.2004.11875
- arXiv:
- arXiv:2004.11875
- Bibcode:
- 2020arXiv200411875M
- Keywords:
-
- Physics - Applied Physics;
- Condensed Matter - Materials Science;
- Physics - Chemical Physics
- E-Print:
- J. Mater. Chem. C, 2018,6, 13128-13135