Capacitance-Voltage (C-V) Characterization of Graphene-Silicon Heterojunction Photodiodes
Abstract
Heterostructures of two-dimensional (2D) and three-dimensional (3D) materials form efficient devices for utilizing the properties of both classes of materials. Graphene/silicon (G/Si) Schottky diodes have been studied extensively with respect to their optoelectronic properties. Here, we introduce a method to analyze measured capacitance-voltage data of G/Si Schottky diodes connected in parallel with G/silicon dioxide/Si (GIS) capacitors. We also demonstrate the accurate extraction of the built-in potential ($\Phi$$_{bi}$) and the Schottky barrier height from the measurement data independent of the Richardson constant.
- Publication:
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arXiv e-prints
- Pub Date:
- February 2020
- DOI:
- 10.48550/arXiv.2002.10763
- arXiv:
- arXiv:2002.10763
- Bibcode:
- 2020arXiv200210763R
- Keywords:
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- Physics - Applied Physics;
- Condensed Matter - Mesoscale and Nanoscale Physics