Fabrication of Cu2O/Si nanowires photocathode and its photoelectrochemical properties
Abstract
Using a simple dipping method, Cu2O nanoparticles were successfully deposited on the surface and the sidewall of silicon nanowires (Si NWs). As a photocathode, the Cu2O/Si NWs composites not only show a low reflectance of 10.75% in the 300-900 nm wavelength range, but also can enhance the separation of the photogenerated electron-hole pairs due to the junction formed by Cu2O and Si NWs. The Cu2O/Si NWs-20 min photocathode achieved a photocurrent of 3.5 mA cm-2 at -0.8 V versus AgCl/Ag and a photoconversion efficiency of 1.2%.
- Publication:
-
Semiconductor Science Technology
- Pub Date:
- April 2020
- DOI:
- 10.1088/1361-6641/ab73e8
- Bibcode:
- 2020SeScT..35d5009H
- Keywords:
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- a simple dipping method;
- Cu2O/Si NWs;
- photocathode;
- junction