n‑Doped InGaP Nanowire Shells in GaAs/InGaP Core–Shell p–n Junctions
Abstract
Herein, the characterization of n‑doped InGaP:Si shells in coaxial not‑intentionally doped (nid)‑GaAs/n‑InGaP as well as n–p–n core–multishell nanowires grown by metalorganic vapor‑phase epitaxy is reported. The multi‑tip scanning tunneling microscopy technique is used for contact‑independent resistance profiling along the tapered nid‑GaAs/n‑InGaP core–shell nanowires to estimate the established emitter shell doping concentration to ND ≈ 3 · 1018 cm−3. Contacts on these shells are demonstrated and exhibit ohmic current–voltage characteristics after annealing. Application potential is demonstrated by the growth and processing of coaxial p‑GaAs/n‑InGaP junctions in n–p–n core–multishell nanowires, with n‑InGaP being the electron‑supplying emitter material. Current–voltage characteristics and temperature‑dependent electroluminescence measurements substantiate successful doping of the n‑InGaP shell. A tunneling‑assisted contribution to the leakage currents of the investigated p–n junctions is verified by the sub‑bandgap luminescence at low temperatures and is attributed to radiative tunneling processes.
- Publication:
-
Physica Status Solidi B Basic Research
- Pub Date:
- February 2020
- DOI:
- 10.1002/pssb.201900358
- Bibcode:
- 2020PSSBR.25700358L