AlInGaN-based superlattice p-region for improvement of performance of deep UV LEDs
Abstract
A deep ultraviolet light-emitting diode (DUV LED) consisting of a specifically designed intermediate p-type region involving a superlattice quaternary nitride alloy has been proposed. The light output power of the proposed structure has been found significantly large; around 28.30 times high in comparison to the conventional structure, at the current density of 200 A/cm2. The maximum internal quantum efficiency of the proposed structure is 153.63% higher compared to the conventional one. Moreover, the efficiency droop has been reduced by 99.08%. Absence of abrupt potential barrier owing to the strain compensation provided by the superlattice p-AlInGaN layer offers an attractive solution for enhancing the hole injection into the active region leading to the improvement in performance of DUV LED.
- Publication:
-
Optical Materials
- Pub Date:
- June 2020
- DOI:
- 10.1016/j.optmat.2020.109846
- Bibcode:
- 2020OptMa.10409846M
- Keywords:
-
- Superlattice-AlInGaN;
- Strain compensation;
- Efficiency droop;
- DUV LED