Passive terahertz imaging detectors based on antenna-coupled high-electron-mobility transistors
Abstract
Aiming at the requirement of passive terahertz imaging, we report a high-sensitivity terahertz detector based on an antenna-coupled AlGaN/GaN high-electron-mobility transistor (HEMT) at 77 K without using low-noise terahertz amplifier. The measured optical noise-equivalent power and the noise-equivalent temperature difference of the detector were about 0.3 p W / H z and 370 mK in a 200 ms integration time over a bandwidth of 0.7 − 0.9 THz, respectively. By using this detector, we demonstrated passive terahertz imaging of room-temperature objects with signal-to-noise ratio up to 13 dB. Further improvement in the sensitivity may allow passive terahertz imaging using AlGaN/GaN-HEMT at room temperature.
- Publication:
-
Optics Express
- Pub Date:
- February 2020
- DOI:
- 10.1364/OE.385042
- Bibcode:
- 2020OExpr..28.4911S