Controllable p-n junctions in three-dimensional Dirac semimetal Cd3As2 nanowires
Abstract
We demonstrate a controllable p-n junction in a three-dimensional Dirac semimetal (DSM) Cd3As2 nanowire with two recessed bottom gates. The device exhibits four different conductance regimes with gate voltages, the unipolar (n-n and p-p) and bipolar (n-p and n-p) regimes, where p-n junctions are formed. The conductance in the p-n junction regimes decreases drastically when a magnetic field is applied perpendicular to the nanowire. In these regimes, the device shows quantum dot behavior, whereas the device exhibits conductance plateaus in the n-n regime at high magnetic fields. Our experiment shows that the ambipolar tunability of DSM nanowires can enable the realization of quantum devices based on quantum dots and electron optics.
- Publication:
-
Nanotechnology
- Pub Date:
- May 2020
- DOI:
- 10.1088/1361-6528/ab6dfe
- arXiv:
- arXiv:1909.04353
- Bibcode:
- 2020Nanot..31t5001B
- Keywords:
-
- 3D Dirac semimetal;
- Cd3As2;
- p-n junction;
- nanowire;
- quantum dot;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- Nanotechnology 31, 205001 (2020)