Characterization of SINTEF 3D diodes with trenched-electrode geometry before and after neutron irradiation

We report on the characterization of 3D diodes with trenched electrodes and active edges manufactured by SINTEF MiNaLab (Oslo, Norway), and irradiated with reactor neutrons up to a maximum fluence of 2 × 10¹⁶ n_eq cm^-2. The charge collection performance of these test structures is investigated by using a position resolved pulsed laser system, and discussed with the aid of TCAD simulations. In spite of the non-idealities of the test setup, whose spatial resolution is not fine enough for the small-pitch geometries of the considered samples, results confirm the good radiation hardness of 3D sensors with trenched electrodes.