Activation Energy of the Conductance of p-n-4H-SiC «Al» Structures Doped with Aluminum by the Method of Low-Temperature Diffusion
Abstract
A study has been made of the activation energy of the conductance of a p-n-4H-SiC «Al» structure created through the doping of silicon carbide with aluminum. The doping was implemented by a novel method of low-temperature diffusion, in which the diffusion of aluminum in silicon carbide is stimulated by a carbon- and silicon-vacancy flux produced by the oxidation of the silicon surface.
- Publication:
-
Journal of Engineering Physics and Thermophysics
- Pub Date:
- August 2020
- DOI:
- 10.1007/s10891-020-02205-5
- Bibcode:
- 2020JEPT...93.1036Z
- Keywords:
-
- 4H-SiC;
- p-n junction;
- low-temperature diffusion;
- activation energy