Improved Low-Voltage Sensing Performance in MIS(p) Tunnel Diodes by Oxide Thickening at the Gate Fringe
Abstract
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- April 2020
- DOI:
- 10.1109/TED.2020.2974963
- Bibcode:
- 2020ITED...67.1845L