Effects of Contact Potential and Sidewall Surface Plane on the Performance of GaN Vertical Nanowire MOSFETs for Low-Voltage Operation
Abstract
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- April 2020
- DOI:
- 10.1109/TED.2020.2975599
- Bibcode:
- 2020ITED...67.1547S