Effect of Seed Layer on Gate-All-Around Poly-Si Nanowire Negative-Capacitance FETs With MFMIS and MFIS Structures: Planar Capacitors to 3-D FETs
Abstract
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- February 2020
- DOI:
- 10.1109/TED.2019.2958350
- Bibcode:
- 2020ITED...67..711L