Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate With 1010 High On/Off Current Ratio and Low Specific On-Resistance
Abstract
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- March 2020
- DOI:
- 10.1109/LED.2020.2968392
- Bibcode:
- 2020IEDL...41..329L