Vertical Sandwich Gate-All-Around Field-Effect Transistors With Self-Aligned High-k Metal Gates and Small Effective-Gate-Length Variation
Abstract
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- January 2020
- DOI:
- 10.1109/LED.2019.2954537
- Bibcode:
- 2020IEDL...41....8Y