An effectual enhancement to the electrical conductivity of graphene FET by silver nanoparticles

Electrical properties of two-dimensional materials can be effected by metal adsorbents and clusters. In this manuscript, we have reported the effects of silver (Ag) nanoparticles on the transport properties of graphene field effect transistor with different diameter and concentrations. Raman spectroscopy is utilized to measure doping level in graphene field effect transistor. The peak positions of G and 2D peaks after doping of Ag nanoparticles shows n-type doping in graphene. Electrical transport properties are measured using four probe technique. N-type doping effect in graphene flakes with Ag nanoparticles is also evident from Dirac point shifting to gate voltages below zero. Electron mobility of graphene field effect transistor is increased from 944.94 cm² V^-1 s^-1 to 1430.07 cm² V^-1 s^-1 with decreasing diameter of Ag nanoparticles. The same trend is observed with increasing concentration of Ag nanoparticles. These outcomes may play dynamic role to understand the performance of graphene-based sensing devices.