Interface study of Sc/Si multilayers
Abstract
The properties of the interfaces of the Sc/Si multilayers are evaluated utilizing grazing incident X-ray reflection, X-ray diffraction and X-ray scattering. The process of amorphous-to-crystalline transition was studied. A series of Sc/Si multilayers with and without B4C diffusion barrier layer at different interfaces were fabricated. The interface properties of Sc-on-Si and Si-on-Sc, including roughness and diffusion, were characterized separately. The asymmetry property of two interfaces was confirmed. The scattering measurements results show that, Sc/B4C/Si and B4C/Sc/B4C/Si multilayers are similar and narrower comparing with the results of Si/B4C/Sc and Sc/Si multilayers. The X-ray diffraction results show that, the Si/B4C/Sc multilayers were stability until 300℃, while after annealing at 300℃ Sc (1 1 1) signal is reduced sharply in the Sc/Si multilayers, for Sc/B4C/Si multilayers the reduction of Sc (1 1 1) signal experienced an obvious reduction but not severe compared with Sc/Si multilayers. These results indicate that Sc-on-Si interface contributes the majority of roughness while the interface diffusion turns out to be more severe at Si-on-Sc interface.
- Publication:
-
Applied Surface Science
- Pub Date:
- June 2020
- DOI:
- 10.1016/j.apsusc.2020.146066
- Bibcode:
- 2020ApSS..51546066Z
- Keywords:
-
- Multilayers;
- Interface;
- Diffusion barrier layer;
- Annealing;
- Sc/Si