Local atomic structure of the GaN-side of the Al2O3/GaN interface revealed by X-ray absorption spectroscopy
Abstract
The interface between a gate insulator (Al2O3) and a semiconductor (GaN) was investigated via surface-sensitive Ga K-edge extended X-ray absorption fine structure spectroscopy, achieved by detecting the Ga LMM Auger electrons originated from the Ga K-shell absorption. This GaN-side interface study was conducted on Al2O3 thin films formed via atomic layer deposition. The determined atomic structures revealed GaN crystalline changes and the formation of Ga-O bonds due to nitrogen annealing.
- Publication:
-
Applied Surface Science
- Pub Date:
- June 2020
- DOI:
- 10.1016/j.apsusc.2020.146058
- Bibcode:
- 2020ApSS..51546058I
- Keywords:
-
- Extended X-ray absorption fine structure (EXAFS);
- Interface;
- Gallium nitride (GaN);
- Aluminum oxide (Al<SUB>2</SUB>O<SUB>3</SUB>);
- Atomic layer deposition (ALD);
- Post-deposition annealing (PDA)