Epitaxy of GaN(0001) and GaN(10\bar {1}1) Layers on Si(100) Substrate
Abstract
Two different approaches to epitaxy of 4-μm-thick layers of polar GaN(0001) and semipolar GaN(10\bar {1}1) on a V-shaped nanostructured Si(100) substrate with nanometer-thick SiC and AlN buffer layers have been experimentally demonstrated. The GaN(0001) layers were synthesized by hydride vapor-phase epitaxy, and GaN(10\bar {1}1) layers, by metal-organic vapor-phase epitaxy, with the growth completed by hydride vapor-phase epitaxy. It was shown that layers of the polar GaN(0002) have a longitudinal elastic stress of -0.45 GPa and the minimum full width at half-maximum of the X-ray diffraction rocking curve ωθ 45 arcmin, whereas for the semipolar GaN(10\bar {1}1), these values are -0.29 GPa and ωθ 22 arcmin, respectively. A conclusion is drawn that the combined technology of semipolar gallium nitride on a silicon (100) substrate is promising.
- Publication:
-
Technical Physics Letters
- Pub Date:
- June 2019
- DOI:
- 10.1134/S106378501906004X
- Bibcode:
- 2019TePhL..45..529B
- Keywords:
-
- semipolar gallium nitride;
- Raman scattering;
- vapor-phase epitaxy