Anisotropic grain-boundary effect on electronic transport in superconducting FeSe thin films
Abstract
The engineering of the microstructure of a superconducting FeSe thin film by the choice of a proper substrate and its crystallographic orientation is demonstrated. To this end epitaxial c-axis oriented FeSe thin films are grown on (110) oriented single-crystalline SrTiO3 substrates by means of sputtering. The extraordinary microstructure is characterized by the uniaxial alignment of plate-like crystalline grains along the
- Publication:
-
Superconductor Science Technology
- Pub Date:
- February 2019
- DOI:
- 10.1088/1361-6668/aaf077
- Bibcode:
- 2019SuScT..32b5001S
- Keywords:
-
- chalcogenides;
- grain boundaries;
- anisotropy;
- transport properties