Gamma Irradiation-Induced Chemical Decomposition-Related Bandgap Engineering in SnO2 Nanoparticles
Abstract
Gamma irradiation-induced chemical decomposition and related phase transformation from SnO2 nanoparticles (NPs) to SnO have been studied using X-ray diffraction (XRD), Raman spectroscopy, transmission electron microscopy (TEM) and UV-Vis spectroscopy. XRD studies show that the SnO2NPS are crystalline in nature with rutile structure. Crystallinity of the NPs increases with the increase of gamma irradiation doses, which is consistent with the results of TEM. At high gamma irradiation doses, SnO phase appears from SnO2 matrix, which pushes the SnO2 phase toward stoichiometry. The band gap energy has been found in the range of 3.84-3.76eV, larger than the band gap of bulk SnO2. The larger band gap is attributed due to small particle size, which is confirmed by TEM studies. Optical reflectance and band gap decrease with the increase of gamma irradiation doses due to creation of defects. This property of SnO2 NPs makes it suitable for use in optical devices.
- Publication:
-
Surface Review and Letters
- Pub Date:
- 2019
- DOI:
- 10.1142/S0218625X18502281
- Bibcode:
- 2019SRL....2650228A
- Keywords:
-
- SnO<SUB>2</SUB>NPs;
- gamma irradiation;
- chemical decomposition;
- bandgap engineering;
- Raman spectroscopy