A bonded template-assisted monolithic integration platform
Abstract
We present room-temperature continuous-wave lasing of 1.31 μm multi-quantum well lasers on a novel defect-free heterogeneous III-V-on-silicon integration platform. The epitaxially grown laser structure on the platform shows significantly low dislocation density of 9.5×104 cm-2, leading to a minimal threshold current density of 813 A/cm2. These results bring promise to create multi functionalities like source, modulation and detection, etc. on such a defect-free, low-cost, large-scale substrate for Datacom applications.
- Publication:
-
Optoelectronic Devices and Integration VIII
- Pub Date:
- November 2019
- DOI:
- 10.1117/12.2539077
- Bibcode:
- 2019SPIE11184E..0OH