1.2-um InAs/GaAs high-density quantum dot laser
Abstract
Here we report the growth method of InGa/GaAs quantum dot (QD) with differnet QD density by manipulating InAs deposition rate from 0.065 ML/s to 0.1 ML/s. Chose the highest density QD as the active region and grow multilayer InAs/GaAs QD with high uniform. Then fabricate a narrow ridge waveguide laser by semiconductor process. The rigid waveguide is 1.8 um high and 5 um wide, and the cavity length is 1mm. The output power of this narrow-rigid laser is 164 mW and central wavelength is 1204.6 nm when the injection current is 0.5 A at 15°C. The threshold current is as low as 35 mA, and threshold current density is 1939 A/cm2.
- Publication:
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14th National Conference on Laser Technology and Optoelectronics (LTO 2019)
- Pub Date:
- May 2019
- DOI:
- 10.1117/12.2532696
- Bibcode:
- 2019SPIE11170E..14S