Optimum growth parameters of InAs/AlSb superlattices for interband cascade lasers
Abstract
We report the optimum growth parameters of InAs/AlSb superlattices (SLs) for interband cascade lasers (ICL) grown by the solid-source molecular beam epitaxy(MBE). The InAs/AlSb superlattices samples were grown on GaSb substrate at different temperatures and characterized by high resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM) and photoluminescence (PL). By changing the group-Ⅴ flux ratio during the SLs growth, the InAs/AlSb superlattices matched to GaSb substrate were obtained. Subsequently, the SLs were grown at different growth temperature. By photoluminescence we found the highest PL intensity was obtained when the SLs samples were grown at 458°C and the PL wavelength is at 1730 nm. From 10 × 10 μm2 AFM image, we found the root mean square (RMS) of the sample grown at 458°C was 1.96 Å which indicates the low surface roughness and god surface morphology.
- Publication:
-
14th National Conference on Laser Technology and Optoelectronics (LTO 2019)
- Pub Date:
- May 2019
- DOI:
- 10.1117/12.2532548
- Bibcode:
- 2019SPIE11170E..0VZ