Magneto-transport property of an AlInN/AlN/GaN heterostructure
Abstract
This paper reports a research of the magneto-transport property of an AlInN/AlN/GaN heterostructure. A large positive magnetoresistance (MR) up to 79% under 9 T is observed, which is indicative of potential sensor application. The observed positive MR is attributed to the presence of the parallel conduction. Meanwhile, the Shubnikov-de Hass (SdH) oscillations of the longitudinal MR appear up at high magnetic field. From the SdH oscillations, beating patterns are observed in the AlInN/AlN/GaN heterostructure. Neither the magneto-intersubband oscillation nor the zero-field spin splitting can explain the observed beating patterns, which can be attributed to the sample inhomogeneity.
- Publication:
-
Physica B Condensed Matter
- Pub Date:
- June 2019
- DOI:
- 10.1016/j.physb.2019.03.030
- Bibcode:
- 2019PhyB..562..112X
- Keywords:
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- Two-dimensional electron gas;
- Positive magnetoresistance;
- Beating pattern