In-Plane Ferroelectric Tunnel Junction
Abstract
Ferroelectric materals are an important platform for the realization of nonvolatile memories. So far, existing ferroelectric memory devices have utilized out-of-plane polarization in ferroelectric thin films. In this paper, we propose a type of random-access memory (RAM) based on ferroelectric thin films with in-plane polarization, called an "in-plane ferroelectric tunnel junction." Apart from nonvolatility, lower power usage, and a faster writing operation compared with traditional dynamic RAMs, our proposal has the advantage of a faster reading operation and a nondestructive reading process, thus overcoming the write-after-read problem that exists widely in current ferroelectric RAMs. The recent discovered room-temperature ferroelectric IV-VI semiconductor thin films are a promising material platform for the realization of our proposal.
- Publication:
-
Physical Review Applied
- Pub Date:
- February 2019
- DOI:
- 10.1103/PhysRevApplied.11.024048
- arXiv:
- arXiv:1807.07562
- Bibcode:
- 2019PhRvP..11b4048S
- Keywords:
-
- Physics - Applied Physics;
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Materials Science
- E-Print:
- 6 pages, 3 figures + 3 pages of supplemental material