Optimization of III-V Semiconductor Quantum Dot Lasers and Their Integration Process for Integrated Photonics and Sensing Application
Abstract
In the first part of this dissertation, we develop a quantum dot cascade laser (QDCL) structure for mid-infrared emission. Photoluminescence (PL) measurements of an InAs/AlAs QDCL structure grown by Molecular Beam Epitaxy (MBE) confirms the electronic states calculated using nextnano++ software. As-grown QDCL samples are fabricated as edge emitting and surface emitting diodes and their optoelectronic characteristics are measured with Light-Current-Voltage (L-I-V) setup. In addition, we introduce strain balancing condition on mid-infrared QDCLs which are based on optimized injection and extraction structures. We propose that the strain balancing condition enables to develop QDCL with high output power and low threshold current. In the second part of the dissertation, we optimize integration of III-V lasers on silicon wafer for LIDAR application. Optimization of laser beam used in the heat transfer in the integration process has been utilized successfully. Additionally, we have showed that Parity-time symmetry break can be a significantly easy way to design fiber coupler directional coupler and calculate coupling efficiency.
- Publication:
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Ph.D. Thesis
- Pub Date:
- 2019
- Bibcode:
- 2019PhDT........73D
- Keywords:
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- Physics