Strain Enhanced Visible–Ultraviolet Absorption of Blue Phosphorene/MoX2 (X = S,Se) Heterolayers
Abstract
With ultrahigh carrier mobility and large band gap, blue phosphorene (bP) is a promising photoelectronics surpassing black phosphorene and can be further improved by heterostacking. Herein, strain‑engineering of the electronic band gaps and light absorption of two van der Waals heterostructures bP/MoS2 and bP/MoSe2 via first‑principles calculations has been reported. Their electronic band structures are sensitive to in‑plane strains. It is interesting and beneficial that biaxial compressive strain range of −0.02 to −0.055 induces the direct band gap in bP/MoSe2. There are two critical strains for bP/MoS(Se)2 heterostructures, where the semiconductor–metal transition can be observed. The bP/MoS(Se)2 heterostructures exhibit strong visible–ultraviolet light absorption, which can be further enhanced via biaxial strain. Our results suggest that bP/MoS(Se)2 heterostructures have promising electronics and visible–ultraviolet optoelectronic applications.
- Publication:
-
Physica Status Solidi Rapid Research Letters
- Pub Date:
- May 2019
- DOI:
- 10.1002/pssr.201800659
- Bibcode:
- 2019PSSRR..1300659G