High-speed double layer graphene electro-absorption modulator on SOI waveguide
Abstract
We report on a C-band double layer graphene electro-absorption modulator on a passive SOI platform showing 29GHz 3dB-bandwith and NRZ eye-diagrams extinction ratios ranging from 1.7 dB at 10 Gb/s to 1.3 dB at 50 Gb/s. Such high modulation speed is achieved thanks to the quality of the CVD pre-patterned single crystal growth and transfer on wafer method that permitted the integration of high-quality scalable graphene and low contact resistance. By demonstrating this high-speed CVD graphene EAM modulator integrated on Si photonics and the scalable approach, we are confident that graphene can satisfy the main requirements to be a competitive technology for photonics.
- Publication:
-
Optics Express
- Pub Date:
- July 2019
- DOI:
- 10.1364/OE.27.020145
- arXiv:
- arXiv:2003.11896
- Bibcode:
- 2019OExpr..2720145G
- Keywords:
-
- Physics - Applied Physics;
- Physics - Optics
- E-Print:
- doi:10.1364/OE.27.020145