Differential cross-section measurements for deuteron elastic scattering on natSi for elastic backscattering purposes
Abstract
The differential cross sections of the natSi(d,d0) elastic scattering were determined at six backscattering angles, 120°, 130°, 140°, 150°, 160° and 170°. Two experiments were performed, one for the determination of the cross-section values and one for the validation of the obtained results. In the first experiment, a thin Si3N4 target with a thin layer of Au evaporated on top was bombarded with deuterons in the energy range between 1000 and 2200 keV in steps of 10 keV. In the benchmarking experiment, a thick Si [1 1 1] polished crystalline wafer target with a thin Au layer evaporated on top was irradiated with deuterons at Εd,lab = 1300, 1600, 1900 and 2200 keV and at four scattering angles (130°, 140°, 150°, 160°).
- Publication:
-
Nuclear Instruments and Methods in Physics Research B
- Pub Date:
- July 2019
- DOI:
- 10.1016/j.nimb.2018.02.033
- Bibcode:
- 2019NIMPB.450...24N
- Keywords:
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- EBS;
- Silicon;
- Differential cross section;
- Benchmarking