Identification of Mn dopant in the structure of TlInS2 layered semiconductor
Abstract
The structure of TlInS2 layered semiconductor doped with 0.3% concentration of Mn impurity has been investigated by using x-ray diffraction (XRD) and Electron Paramagnetic Resonance (EPR) spectroscopy. The experiments were carried out to probe the local environment surrounding the Mn dopants in the crystal structure of TlInS2. The interatomic distances between Mn - ions and neighboring atoms and effective valence of Mn - ions were determined. XRD - investigation indicated that the effective valence of Mn ions in TlInS2 is close to +4. It has been obtained that the EPR spectra of TlInS2 + 0.3% Mn consist of a broad resonance line stemming from interacting spins and a set of hyperfine structure lines originating from the paramagnetic
- Publication:
-
Materials Research Express
- Pub Date:
- May 2019
- DOI:
- 10.1088/2053-1591/ab063e
- Bibcode:
- 2019MRE.....6e6110O
- Keywords:
-
- electron paramagnetic resonance;
- x-ray diffraction;
- hyperfine structure;
- layered semiconductors