Influence of a SiO2 passivation on electrical properties and reliability of In-W-Zn-O thin-film transistor
Abstract
The influence of a SiO2 passivation layer on the electrical properties and reliability of an In-W-Zn-O thin-film transistor (IWZO TFT) was investigated under various post-annealing temperatures (Ta). Although the TFT without passivation showed good transfer characteristics when the Ta is 150 °C, it has huge hysteresis and poor reliability. Furthermore, the TFTs without passivation changed from transistor to conductor when the Ta is 200 °C or higher. In contrast, the TFTs with passivation exhibited switching property even at Ta of 350 °C. Positive bias temperature stress reliability of the TFTs significantly improved by applying the Ta with passivation. Thus, a passivation layer is essential to increase the Ta, resulting in the improvement of electrical properties and reliability of the IWZO TFTs.
- Publication:
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Japanese Journal of Applied Physics
- Pub Date:
- January 2019
- DOI:
- 10.7567/1347-4065/aae895
- Bibcode:
- 2019JaJAP..58a8003K