High mobility (>30 cm2 V-1 s-1) and low source/drain parasitic resistance In-Zn-O BEOL transistor with ultralow <10-20 A μm-1 off-state leakage current
Abstract
We have demonstrated and experimentally verified the advantages of the In-Zn-O (InZnO) channel compared with the In-Ga-Zn-O (InGaZnO) channel for a high-performance oxide semiconductor channel field-effect transistor (FET) with both ultralow off-state leakage current and high on-current. Compared with the InGaZnO FET, high mobility (>30 cm2 V-1 s-1) and a reduction of source/drain (S/D) parasitic resistance by 75% were achieved by the InZnO FET. Analysis of the Schottky barrier height at the S/D contact and the band offset between the oxide semiconductor channel and gate insulator SiO2 revealed that the reduction of S/D parasitic resistance originates from the lowering of the conduction band minimum by the InZnO channel. Moreover, ultralow (<10-20 A μm-1) off-state leakage current characteristics including not only S/D leakage current but also gate leakage current were confirmed to be maintained even with a thin gate insulator with an equivalent oxide thickness of 6.2 nm.
- Publication:
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Japanese Journal of Applied Physics
- Pub Date:
- April 2019
- DOI:
- 10.7567/1347-4065/ab01d7
- Bibcode:
- 2019JaJAP..58BBJ07S