Design of Phased Array T/R Component Microsystem Based on Heterogeneous Integration Technology
Abstract
An X-band silicon-based 2×2 phased array T/R module was developed based on MEMS technology and three-dimensional heterogeneous integration technology such as through-silicon via (TSV). The module uses a transceiver integrated multifunction chip solution and is packaged in two layers of silicon: upper layer integrated low noise amplifier, power amplifier, switch, power modulation driver, PMOS and other chips; lower layer integrated multi-function chip, serial-to-parallel chip, logic operation chip. Two-layer silicon package are stacked by solder balls. The T/R module sample’s size is 20mm×20mm×3mm. The test results show that at 8-12GHz, the transmit power is higher than 29dBm, the transmit gain is 20dB, the receive gain is 29dB, the noise figure (NF) is 3dB, and the switch isolation is 37dB.
- Publication:
-
Journal of Physics Conference Series
- Pub Date:
- October 2019
- DOI:
- 10.1088/1742-6596/1325/1/012010
- Bibcode:
- 2019JPhCS1325a2010E