Low write current and strong durability in high-speed spintronics memory (spin-Hall MRAM and VoCSM) through development of a shunt-free design process and W spin-Hall electrode
Abstract
We investigated a voltage-control spintronics memory (VoCSM) with a shunt-free design process and W spin-Hall electrode. We successfully reduced the write current to 62 μA at a 5-ns write pulse (48 μA at a 20-ns write pulse), utilizing a high spin-Hall efficiency by developing the shunt-free design process and optimized W spin-Hall electrode. Moreover, the device was very reliable, exhibiting properties such as a low write error rate (<1 × 10-8) and high endurance (>1 × 1012 cycles). The spin-Hall MRAM and VoCSM with the shunt-free design process and W spin-Hall electrode could lead to high-speed nonvolatile memory with low power consumption and high durability.
- Publication:
-
Journal of Magnetism and Magnetic Materials
- Pub Date:
- December 2019
- DOI:
- 10.1016/j.jmmm.2019.165536
- Bibcode:
- 2019JMMM..49165536K