Impact of blocking temperature distribution on the thermal behavior of MnIr and MnPt magnetoresistive stacks
Abstract
Ensuring a reliable reference in magnetoresistive devices requires robust exchange biased antiferromagnetic/ferromagnetic (AF/FM) bilayers with strong resilience to high temperatures. In this work, we studied the thermal stability of MnPt and MnIr by investigating the exchange bias effect in AF/CoFe bilayers and tunneling magnetoresistance (TMR) full stacks. In bilayers, the obtained blocking temperature (Tb) of 380 °C for MnPt is higher than Tb of 340 °C for MnIr, indicating a better thermal stability. Based on Malozemoff's model, we developed a comprehensive model to describe the exchange bias field (Hex) behavior at high temperature by considering the Tb distribution and temperature dependence of FM magnetization, giving a good agreement with the experimental data. With increasing temperature, a coercivity (Hc) enhancement peak was observed in MnIr bilayer, which shows a good agreement with Tb distribution. This evidences the Hc peak is dominated by the thermal activation of AF grains, indicating that the Hc peak only appears at Tbcenter , which is lower than overall Tb . The structural properties and grain size of AF layers were studied by X-ray diffraction (XRD), where a mean grain size of 10.6 and 12.6 nm were obtained for MnPt and MnIr, respectively. Compared to bilayers, a more stable thermal behavior was observed in full stacks. In conclusions, our study compared the thermal stability of exchange bias coupling using MnPt and MnIr and developed a comprehensive model to study their temperature dependence. This proposed approach can be used for theoretical studies and experimental designs of AF-based materials for spintronic applications, such as magnetoresistive devices and high density memories.
- Publication:
-
Journal of Magnetism and Magnetic Materials
- Pub Date:
- May 2019
- DOI:
- 10.1016/j.jmmm.2019.01.007
- Bibcode:
- 2019JMMM..477...68L
- Keywords:
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- Exchange bias;
- Antiferromagnetic materials;
- Thermal stability;
- Blocking temperature;
- Magnetoresistive devices