Raman scattering and cathodoluminescence properties of Er3+ and Eu3+ co-doped GaN films

GaN:Eu³⁺/Er³⁺ films were prepared via ion implantation method. All samples were investigated by Raman scattering and Cathodoluminescence (CL) spectra. Six new Raman peaks were introduced by Er³⁺ ions implantation at 181, 214, 238, 846, 880 and 911 cm^-1, respectively. In addition, the intensity ratio of 560 nm with respect to 539 nm of Er³⁺ ions and the intensity ratio of 623 nm (belong to Eu³⁺) to 539 nm (belong to Er³⁺) both decrease with the Er³⁺ ions implantation concentration, which proved the existence of the energy transfer from Eu³⁺ to Er³⁺ by dipole-dipole interaction in GaN host. Finally, the chromaticity coordinate and color correlated temperatures could be changed through adjusting the ratio of Er³⁺ concentration with respect to Eu³⁺ concentration.