Temperature-Dependent Magnetoresistance of Single-Layer Graphene
Abstract
The magnetoresistances of single-layer graphene samples with various types of scattering impurities are measured over wide temperature and magnetic field ranges. The magnetoresistance of samples with a short-range potential is shown to be proportional to the square root of the magnetic field except for the cases of relatively low concentrations, where the magnetoresistance is linear. The square-root temperature dependence of the magnetoresistance is analyzed and good agreement with theoretical calculations is obtained. These results indicate that the square-root magnetoresistance in low magnetic fields can be considered as a characteristic feature of single-layer graphene with a short-range disorder.
- Publication:
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Soviet Journal of Experimental and Theoretical Physics
- Pub Date:
- September 2019
- DOI:
- 10.1134/S1063776119080156
- Bibcode:
- 2019JETP..129..438V