Influence of silicon melt convection on interface instability in large-size silicon carbide solution growth
Abstract
The interface instability in large-size silicon carbide solution growth has been investigated with a focus on the influence of silicon solution convection. Indications have shown that solution convection produces a substantial effect on the instability of the growth interface. As the SiC size increases, the instability becomes more evident. Therefore, improved solution convection is required for growing large-sized silicon carbide ingots by the solution method.
- Publication:
-
Journal of Crystal Growth
- Pub Date:
- December 2019
- DOI:
- 10.1016/j.jcrysgro.2019.125248
- Bibcode:
- 2019JCrGr.52725248L
- Keywords:
-
- A1. Computer simulation;
- A1. Interface instability;
- A1. Silicon solution convection;
- A2. Silicon carbide solution growth;
- B2. Large-sized silicon carbide