Selective area molecular beam epitaxy of InSb nanostructures on mismatched substrates
Abstract
The selective molecular beam epitaxy of InSb inside nanoscale apertures realized in a SiO2 mask deposited on a highly mismatched substrate is studied. The substrate of interest is GaAs on which a 6.1 Å material (InAs or AlGaSb) has been grown accommodating part of the mismatch with InSb. For sub-100 nm wide aperture, several micron long in-plane InSb nanowires can be obtained. Different ways for measuring the electrical properties of these in-plane nanostructures are proposed. A 1 μm long gate length MOSFET is fabricated on a semi-insulating AlGaSb pseudo-substrate without any transfer on a host substrate.
- Publication:
-
Journal of Crystal Growth
- Pub Date:
- April 2019
- DOI:
- 10.1016/j.jcrysgro.2019.02.012
- Bibcode:
- 2019JCrGr.512....6D
- Keywords:
-
- A3. Molecular beam epitaxy;
- A3. Selective epitaxy;
- B1. Antimonides;
- A1. Nanostructures;
- B3. Field effect transistors;
- B2. Semiconducting indium compounds