Modeling of silicon surface topographies induced by single nanosecond laser pulse induced melt-flows
Abstract
Irradiation with a single nanosecond laser pulse in the melting regime can result in a characteristic change in the surface morphology of crystalline silicon. This has been verified experimentally in a variety of situations, where dimple-shaped surface topographies are produced. In this work, the dimple height, depth, and width are modeled following and extending in a more rigorous manner the approach of Wood and Giles [Phys. Rev. B 23, 2923-2942 (1981)] and that of Schwarz-Selinger and coworkers [Phys. Rev. B 64, 155323 (2001)], upon varying the laser irradiation parameters such as peak energy density, pulse duration, and wavelength. This is achieved with numerical simulations of one-dimensional heat flow as input to the analytical fluid-flow equations.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- May 2019
- DOI:
- 10.1063/1.5053918
- Bibcode:
- 2019JAP...125q5101A