Source Underlap—A Novel Technique to Improve Safe Operating Area and Output-Conductance in LDMOS Transistors
Abstract
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- November 2019
- DOI:
- 10.1109/TED.2019.2942372
- Bibcode:
- 2019ITED...66.4823B